SIHG050 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 51A TO247AC
| Part | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Technology | FET Type | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | TO-247-3 | 3459 pF | 130 nC | 30 V | MOSFET (Metal Oxide) | N-Channel | Through Hole | 51 A | 50 mOhm | 278 W | TO-247AC | 600 V | -55 °C | 150 °C | 5 V | 10 V |