TK13A60 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 600V 13A TO220SIS
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2300 pF | Through Hole | 600 V | N-Channel | 50 W | MOSFET (Metal Oxide) | 13 A | 10 V | TO-220-3 Full Pack | TO-220SIS | 430 mOhm | 40 nC | 30 V | 150 °C |