NVMFD5875NL Series

Dual N−Channel Logic Level Power MOSFET 60V, 22A, 33mΩ

Catalog

Dual N−Channel Logic Level Power MOSFET 60V, 22A, 33mΩ

Part	Configuration	Current - Continuous Drain (Id) @ 25°C	Qualification	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Technology	Grade	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id
ON Semiconductor NVMFD5875NLWFT1G	2 N-Channel (Dual)	7 A	AEC-Q101	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)	540 pF	3.2 W	MOSFET (Metal Oxide)	Automotive	20 nC	33 mOhm	Logic Level Gate	-55 °C	175 ░C	60 V	Surface Mount	3 V
ON Semiconductor NVMFD5875NLT1G	2 N-Channel (Dual)	7 A	AEC-Q101	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)	540 pF	3.2 W	MOSFET (Metal Oxide)	Automotive	20 nC	33 mOhm	Logic Level Gate	-55 °C	175 ░C	60 V	Surface Mount	3 V

Catalog

Dual N−Channel Logic Level Power MOSFET 60V, 22A, 33mΩ

Key Features

• Low rDS(on)to Minimize Conduction Loss

• Low Capacitance to Minimize Driver Losses

• NVMFD5875NLWF − Wettable Flanks Option for Enhanced Optical Inspection

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.