IRFD213 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 250V 450MA 4DIP
| Part | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Technology | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 140 pF | 450 mA | 250 V | 2 Ohm | N-Channel | -55 °C | 150 °C | 4 V | 4-DIP (0.300" 7.62mm) | 8.2 nC | MOSFET (Metal Oxide) | Through Hole |