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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Rds On (Max) @ Id, Vgs | Technology | Package / Case | Supplier Device Package | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | Surface Mount | 900 mA | 4.5 V | 2.7 V | 1.5 V | -55 °C | 150 °C | P-Channel | 600 mOhm | MOSFET (Metal Oxide) | SC-59 SOT-23-3 TO-236-3 | SOT-23-3 | 12 V | 20 V | 150 pF | 625 mW |