SI4101 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 30V 25.7A 8SO
| Part | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Mounting Type | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 6 W | 2.5 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 8190 pF | 20 V | 8-SOIC | 4.5 V 10 V | 8-SOIC | 3.9 mm | 0.154 in | 6 mOhm | 30 V | Surface Mount | P-Channel | 25.7 A | 203 nC |