G3R20 Series

Catalog

SIC MOSFET N-CH 128A TO247-4

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Min]	Vgs (Max) [Max]
GeneSiC Semiconductor G3R20MT12K	15 V	1.2 kV	TO-247-4	219 nC	5873 pF	24 mOhm	542 W	Through Hole	15 V	TO-247-4	N-Channel	2.69 V	175 °C	-55 °C	128 A
GeneSiC Semiconductor G3R20MT17K	15 V	1700 V	TO-247-4			26 mOhm	809 W	Through Hole	15 V	TO-247-4	N-Channel	2.7 V	175 °C	-55 °C	124 A	400 nC	10187 pF
GeneSiC Semiconductor G3R20MT17N	15 V	1700 V	SOT-227			26 mOhm	523 W	Chassis Mount	15 V	SOT-227-4 miniBLOC	N-Channel	2.7 V	175 °C	-55 °C	100 A	400 nC	10187 pF
GeneSiC Semiconductor G3R20MT12N		1.2 kV	SOT-227	219 nC	5873 pF	24 mOhm	365 W	Chassis Mount	15 V	SOT-227-4 miniBLOC	N-Channel	2.69 V	175 °C	-55 °C	105 A			-10 V	20 V