FDMS86369_F085 Series

N-Channel PowerTrench® MOSFET 80V, 65A, 7.5mΩ

Catalog

N-Channel PowerTrench® MOSFET 80V, 65A, 7.5mΩ

Part	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	FET Type	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Qualification	Rds On (Max) @ Id, Vgs
ON Semiconductor FDMS86369-F085	MOSFET (Metal Oxide)	Surface Mount	80 V	10 V	20 V	Power56	N-Channel	Automotive	-55 °C	175 ░C	107 W	46 nC	8-PowerVDFN	65 A	2470 pF	4 V	AEC-Q101	7.5 mOhm

N-Channel PowerTrench® MOSFET 80V, 65A, 7.5mΩ

• Typical RDS(on)= 5.9 mΩ at VGS= 10 V, ID= 65 A

• Typical Qg(tot)= 35 nC at VGS= 10 V, ID= 65 A

• UIS Capability

• RoHS Compliant

• Qualified to AEC Q101

N-Channel PowerTrench®MOSFET 80 V, 65 A, 7.5 mΩ