GD25WD20 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 2MBIT SPI/DUAL 8USON
| Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Write Cycle Time - Word, Page | Memory Type | Memory Organization | Supplier Device Package | Package / Case | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Memory Interface | Access Time | Clock Frequency | Memory Size | Memory Format | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 1.65 V | 3.6 V | 6 ms 100 µs | Non-Volatile | 256K x 8 | 8-USON (3x2) | 8-XFDFN Exposed Pad | FLASH - NOR (SLC) | 85 C | -40 ¯C | Surface Mount | SPI - Dual I/O | 6 ns | 104 MHz | 2 Gbit | FLASH | ||
GigaDevice Semiconductor (HK) Limited | 1.65 V | 3.6 V | 6 ms 100 µs | Non-Volatile | 256K x 8 | 8-USON (1.5x1.5) | 8-XFDFN Exposed Pad | FLASH - NOR (SLC) | 85 C | -40 ¯C | Surface Mount | SPI - Dual I/O | 6 ns | 104 MHz | 2 Gbit | FLASH | ||
GigaDevice Semiconductor (HK) Limited | 1.65 V | 3.6 V | 6 ms 100 µs | Non-Volatile | 256K x 8 | 8-SOP | 8-SOIC | FLASH - NOR (SLC) | 85 C | -40 ¯C | Surface Mount | SPI - Dual I/O | 6 ns | 104 MHz | 2 Gbit | FLASH | 0.154 in | 3.9 mm |
GigaDevice Semiconductor (HK) Limited | 1.65 V | 3.6 V | Non-Volatile | 256K x 8 | 8-SOP | 8-SOIC | FLASH - NOR | 85 C | -40 ¯C | Surface Mount | SPI - Quad I/O | 2 Gbit | FLASH | 0.154 in | 3.9 mm | |||
GigaDevice Semiconductor (HK) Limited | 1.65 V | 3.6 V | 6 ms 97 µs | Non-Volatile | 256K x 8 | 8-USON (1.5x1.5) | 8-XFDFN Exposed Pad | FLASH - NOR (SLC) | 85 C | -40 ¯C | Surface Mount | SPI - Dual I/O | 12 ns | 100 MHz | 2 Gbit | FLASH |