Catalog
Single N-Channel Power MOSFET 100 V, 28 A, 26mΩ
Key Features
• Small Footprint (3x3 mm)
• Low RDS(on)
• Low QG and Capacitance
• Wettable Flank Option available
• AEC−Q101 Qualified and PPAP Capable
• RoHS Compliant
Beta
⌘K
Single N-Channel Power MOSFET 100 V, 28 A, 26mΩ
Single N-Channel Power MOSFET 100 V, 28 A, 26mΩ
| Part | Qualification | Supplier Device Package | Vgs(th) (Max) @ Id | Technology | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Mounting Type | Grade | Vgs (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | AEC-Q101 | 8-WDFN (3.3x3.3) | 3 V | MOSFET (Metal Oxide) | 8-PowerWDFN | -55 °C | 175 ░C | 38 mOhm | Surface Mount | Automotive | 20 V | 3.1 W 36 W | 520 pF | 4.5 V 10 V | 100 V | N-Channel | 6.1 A 21 A |