SN74HC03 Series

4-ch, 2-input, 2-V to 6-V 5.2 mA drive strength NAND gate with open-drain outputs

Catalog

4-ch, 2-input, 2-V to 6-V 5.2 mA drive strength NAND gate with open-drain outputs

Part	Package / Case [custom]	Package / Case [custom]	Package / Case	Features	Logic Type	Supplier Device Package	Number of Inputs	Voltage - Supply [Min]	Voltage - Supply [Max]	Current - Output High, Low	Current - Output High, Low	Max Propagation Delay @ V, Max CL	Input Logic Level - Low [Max]	Input Logic Level - Low [Min]	Number of Circuits	Input Logic Level - High [Min]	Input Logic Level - High [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case [x]	Package / Case [y]
Texas Instruments SN74HC03PW	0.173 "	4.4 mm	14-TSSOP	Open Drain	NAND Gate	14-TSSOP	2	2 V	6 V	-	5.2 mA	23 ns	1.8 V	0.5 V	4	1.5 V	4.2 V	Surface Mount	85 °C	-40 °C
Texas Instruments CD74HC03M96			14-SOIC	Open Drain	NAND Gate		2	2 V	6 V	-	5.2 mA	17 ns	1.8 V	0.5 V	4	1.5 V	4.2 V	Surface Mount	125 °C	-55 °C	0.154 in	3.9 mm
Texas Instruments SN74HC03N			14-DIP	Open Drain	NAND Gate		2	2 V	6 V	-	5.2 mA	23 ns	1.8 V	0.5 V	4	1.5 V	4.2 V	Through Hole	85 °C	-40 °C	0.3 "	7.62 mm
Texas Instruments SN74HC03NG4			14-DIP	Open Drain	NAND Gate		2	2 V	6 V	-	5.2 mA	23 ns	1.8 V	0.5 V	4	1.5 V	4.2 V	Through Hole	85 °C	-40 °C	0.3 "	7.62 mm
Texas Instruments CD74HC03E			14-DIP	Open Drain	NAND Gate		2	2 V	6 V	-	5.2 mA	17 ns	1.8 V	0.5 V	4	1.5 V	4.2 V	Through Hole	125 °C	-55 °C	0.3 "	7.62 mm
Texas Instruments SN74HC03NS			14-SOIC	Open Drain	NAND Gate	14-SO	2	2 V	6 V	-	5.2 mA	23 ns			4	1.5 V	4.2 V	Surface Mount	85 °C	-40 °C	0.209 "	5.3 mm
Texas Instruments SN74HC03NSR			14-SOIC	Open Drain	NAND Gate	14-SO	2	2 V	6 V	-	5.2 mA	23 ns	1.8 V	0.5 V	4	1.5 V	4.2 V	Surface Mount	85 °C	-40 °C	0.209 "	5.3 mm
Texas Instruments SN74HC03D			14-SOIC	Open Drain	NAND Gate		2	2 V	6 V	-	5.2 mA	23 ns	1.8 V	0.5 V	4	1.5 V	4.2 V	Surface Mount	85 °C	-40 °C	0.154 in	3.9 mm
Texas Instruments SN74HC03PWR	0.173 "	4.4 mm	14-TSSOP	Open Drain	NAND Gate	14-TSSOP	2	2 V	6 V	-	5.2 mA	23 ns	1.8 V	0.5 V	4	1.5 V	4.2 V	Surface Mount	85 °C	-40 °C
Texas Instruments SN74HC03DR			14-SOIC	Open Drain	NAND Gate		2	2 V	6 V	-	5.2 mA	23 ns	1.8 V	0.5 V	4	1.5 V	4.2 V	Surface Mount	85 °C	-40 °C	0.154 in	3.9 mm

Catalog

4-ch, 2-input, 2-V to 6-V 5.2 mA drive strength NAND gate with open-drain outputs

Key Features

• Buffered InputsTypical Propagation Delay: 8ns at VCC= 5V, CL= 15pF, TA= 25°COutput Pull-up to 10VFanout (Over Temperature Range)Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL LoadsBus Driver Outputs . . . . . . . . . . . . . 15 LSTTL LoadsWide Operating Temperature Range . . . –55°C to 125°CBalanced Propagation Delay and Transition TimesSignificant Power Reduction Compared to LSTTL Logic ICsHC Types2V to 6V OperationHigh Noise Immunity: NIL= 30%, NIH= 30% of VCCat VCC= 5VHCT Types4.5V to 5.5V OperationDirect LSTTL Input Logic Compatibility, VIL= 0.8V (Max), VIH= 2V (Min)CMOS Input Compatibility, Il1µA at VOL, VOHData sheet acquired from Harris SemiconductorBuffered InputsTypical Propagation Delay: 8ns at VCC= 5V, CL= 15pF, TA= 25°COutput Pull-up to 10VFanout (Over Temperature Range)Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL LoadsBus Driver Outputs . . . . . . . . . . . . . 15 LSTTL LoadsWide Operating Temperature Range . . . –55°C to 125°CBalanced Propagation Delay and Transition TimesSignificant Power Reduction Compared to LSTTL Logic ICsHC Types2V to 6V OperationHigh Noise Immunity: NIL= 30%, NIH= 30% of VCCat VCC= 5VHCT Types4.5V to 5.5V OperationDirect LSTTL Input Logic Compatibility, VIL= 0.8V (Max), VIH= 2V (Min)CMOS Input Compatibility, Il1µA at VOL, VOHData sheet acquired from Harris Semiconductor

Description

The ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family. These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2. The ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family. These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2.