TSM300 Series

Catalog

MOSFETS 60V, 25A, DUAL N-CHANNEL POWER MOSFET

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package [x]	Supplier Device Package [y]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Feature
Taiwan Semiconductor Corporation TSM300NB06DCR RLG	60 V	17 nC	2 N-Channel (Dual)	1079 pF	Surface Mount	8-PowerTDFN	8-PDFN (5x6)	150 °C	-55 °C	2 W 40 W	MOSFET (Metal Oxide)	30 mOhm	6 A 25 A	4.5 V
Taiwan Semiconductor Corporation TSM300NB06CR RLG	60 V			1110 pF	Surface Mount	8-PowerLDFN	8-PDFN	175 °C	-55 °C		MOSFET (Metal Oxide)	30 mOhm	6 A 27 A	4.5 V	18 nC	20 V	5.2	5.75	N-Channel	10 V	3.1 W 56 W
Taiwan Semiconductor Corporation TSM300NB06LDCR RLG	60 V	17 nC	2 N-Channel (Dual)	966 pF	Surface Mount	8-PowerTDFN	8-PDFNU (5x6)	150 °C	-55 °C	2 W 40 W	MOSFET (Metal Oxide)	30 mOhm	5 A 24 A	2.5 V								Logic Level Gate