IRFR210 Series

Catalog

MOSFET N-CH 200V 2.6A DPAK

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Vgs (Max)
Vishay General Semiconductor - Diodes Division IRFR210PBF	1.5 Ohm	8.2 nC	2.5 W 25 W	DPAK	4 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	140 pF	2.6 A	10 V	200 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	20 V
Vishay General Semiconductor - Diodes Division IRFR210TR	1.5 Ohm	8.2 nC	2.5 W 25 W	DPAK	4 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	140 pF	2.6 A	10 V	200 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	20 V
Vishay General Semiconductor - Diodes Division IRFR210TRRPBF	1.5 Ohm	8.2 nC	2.5 W 25 W	DPAK	4 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	140 pF	2.6 A	10 V	200 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	20 V