SIDR5802 Series

Catalog

N-CHANNEL 80 V (D-S) 175C MOSFET

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Technology
Vishay General Semiconductor - Diodes Division SIDR5802EP-T1-RE3	4 V	3020 pF	60 nC	PowerPAK® SO-8DC	-55 °C	175 ░C	80 V	N-Channel	7.5 W 150 W	20 V	34.2 A 153 A	2.9 mOhm	Surface Mount	10 V	7.5 V	PowerPAK® SO-8	MOSFET (Metal Oxide)