CSD16327Q3 Series

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.8 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.8 mOhm

Part	FET Type	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Supplier Device Package	Vgs (Max) [Max]	Vgs (Max) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD16327Q3	N-Channel	1.4 V	8-PowerTDFN	25 V	1300 pF	3 W	4 mOhm	8 V	3 V	Surface Mount	8-VSON-CLIP (3.3x3.3)	10 V	-8 V	-55 °C	150 °C	MOSFET (Metal Oxide)	60 A

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 4.8 mOhm

Key Features

• Optimized for 5-V Gate DriveUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageOptimized for 5-V Gate DriveUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLead-Free Terminal PlatingRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic Package

Description

This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications. This 25-V, 3.4-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.