FDD8451 Series

N-Channel PowerTrench® MOSFET 40V, 28A, 24mΩ

Catalog

N-Channel PowerTrench® MOSFET 40V, 28A, 24mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDD8451	4.5 V 10 V	20 nC	TO-252 (DPAK)	MOSFET (Metal Oxide)	24 mOhm	40 V	3 V	990 pF	Surface Mount	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	9 A 28 A	-55 °C	150 °C
ON Semiconductor FDD8451	4.5 V 10 V	20 nC	TO-252AA	MOSFET (Metal Oxide)	24 mOhm	40 V	3 V	990 pF	Surface Mount	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	9 A 28 A	-55 °C	150 °C

Catalog

N-Channel PowerTrench® MOSFET 40V, 28A, 24mΩ

Key Features

• Max rDS(on)= 24mΩ at VGS= 10V, ID= 9A

• Max rDS(on)= 30mΩat VGS= 4.5V, ID= 7A

• Low gate charge

• Fast Switching

• High performance trench technology for extremely low rDS(on)

• RoHS compliant

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, fast switching speed and extremely low rDS(on).