ECH8660 Series

Complementary Dual Power MOSFET, -30V, -4.5A, 59mΩ

Catalog

Complementary Dual Power MOSFET, -30V, -4.5A, 59mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Technology	Operating Temperature	Drain to Source Voltage (Vdss)	FET Feature	Power - Max [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor ECH8660-TL-H	4.4 nC	240 pF	N and P-Channel	4.5 A	8-ECH	Surface Mount	MOSFET (Metal Oxide)	150 °C	30 V	Logic Level Gate	1.5 W	59 mOhm

Complementary Dual Power MOSFET, -30V, -4.5A, 59mΩ

• The ECH8660 incorporates an Nch and Pch

• High speed switching

• 4.0V drive

• Low ON-resistance

• Realizes high-density mounting

ECH8660 is a Power MOSFET, -30V, -4.5A, 59mΩ, Complementary Dual ECH8 for general purpose switching applications.