SI1029 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N/P-CH 60V 0.305A SC89
| Part | Technology | Configuration | Package / Case | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | FET Feature | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | N and P-Channel | SOT-563 SOT-666 | 190 mA 305 mA | Surface Mount | SC-89 (SOT-563F) | Logic Level Gate | -55 °C | 150 °C | 1.4 Ohm | 60 V | 30 pF | 0.75 nC | 2.5 V | 250 mW |