SQD30 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 55V 30A TO252AA
| Part | Power Dissipation (Max) [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Grade | Mounting Type | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drain to Source Voltage (Vdss) | Technology | Qualification | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 50 W | TO-252AA | -55 °C | 175 ░C | 4.5 V 10 V | 20 mOhm | 20 V | 18 nC | 2.5 V | Automotive | Surface Mount | N-Channel | 1175 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 55 V | MOSFET (Metal Oxide) | AEC-Q101 | 30 A |
Vishay General Semiconductor - Diodes Division | 50 W | TO-252AA | -55 °C | 175 ░C | 4.5 V 10 V | 20 mOhm | 20 V | 18 nC | 2.5 V | Automotive | Surface Mount | N-Channel | 1175 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 55 V | MOSFET (Metal Oxide) | AEC-Q101 | 30 A |