SIHG28 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 650V 28A TO247AC
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Technology | Vgs (Max) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | TO-247-3 | 28 A | TO-247AC | 117 mOhm | 3249 pF | 10 V | 146 nC | MOSFET (Metal Oxide) | 30 V | N-Channel | -55 °C | 150 °C | 650 V | 250 W | 4 V | Through Hole |