IRF610 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 200V 3.3A D2PAK
| Part | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | 140 pF | 4 V | TO-263 (D2PAK) | MOSFET (Metal Oxide) | -55 °C | 150 °C | 200 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | 3.3 A | 3 W 36 W | 10 V | 1.5 Ohm | 8.2 nC | 20 V |