SSM3K316 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 30V 4A TSM
| Part | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Technology | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 700 mW | 4.3 nC | Surface Mount | 1.8 V 10 V | 1 V | SC-59 SOT-23-3 TO-236-3 | 30 V | 150 °C | 12 V | 4 A | N-Channel | MOSFET (Metal Oxide) | 53 mOhm | 270 pF | TSM |