Catalog
650V, 12A, SMD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching. (4-pin package)
Beta
⌘K
650V, 12A, SMD, Silicon-carbide (SiC) SBD
650V, 12A, SMD, Silicon-carbide (SiC) SBD
| Part | Current - Reverse Leakage @ Vr | Supplier Device Package | Technology | Voltage - Forward (Vf) (Max) @ If [Max] | Package / Case | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Operating Temperature - Junction [Max] | Mounting Type | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 240 µA | TO-263AB | SiC (Silicon Carbide) Schottky | 1.55 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 500 mA | 650 V | 12 A | 175 ░C | Surface Mount | 0 ns |