SI4670 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 25V 8A 8SOIC
| Part | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Power - Max [Max] | Drain to Source Voltage (Vdss) | Configuration | Rds On (Max) @ Id, Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Feature | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 2.8 W | 25 V | 2 N-Channel (Dual) | 23 mOhm | 8-SOIC | 680 pF | 8 A | 2.2 V | -55 °C | 150 °C | Surface Mount | Logic Level Gate | 18 nC |