FDS2734 Series

N-Channel UItraFET Trench® MOSFET 250V, 3.0A, 117mΩ

Catalog

N-Channel UItraFET Trench® MOSFET 250V, 3.0A, 117mΩ

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDS2734	250 V	117 mOhm	20 V	N-Channel	4 V	2.5 W	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	Surface Mount	2610 pF	45 nC	6 V 10 V	8-SOIC	3 A

Catalog

N-Channel UItraFET Trench® MOSFET 250V, 3.0A, 117mΩ

Key Features

• Max rDS(on)=117mΩ at VGS=10V, ID= 3.0A

• Max rDS(on)=126mΩ at VGS= 6V, ID= 2.8A

• Fast switching speed

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability

• RoHS compliant

Description

This single N-Channel MOSFET is produced using an advanced UItraFET Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.