MJW21194 Series

Bipolar Transistor, NPN, 250 V, 16 A

Catalog

Bipolar Transistor, NPN, 250 V, 16 A

Part	Transistor Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Frequency - Transition	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor MJW21191	PNP	TO-247-3	10 µA	150 °C	-65 °C	15 hFE	8 A	2 V	Through Hole	4 MHz	TO-247-3	150 V
ON Semiconductor MJW21194	NPN	TO-247-3	100 µA	150 °C	-65 °C		16 A	4 V	Through Hole	4 MHz	TO-247-3	250 V	200 W	20 hFE

Catalog

Bipolar Transistor, NPN, 250 V, 16 A

Key Features

• Total Harmonic Distortion Characterized

• High DC Current Gain - hFE= 20 Min @ IC= 8 Adc

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

Description

The MJW21194 Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.