FDC8601 Series

N-Channel Shielded Gate Power Trench® MOSFET, 100 V, 2.7 A, 109 mΩ

Catalog

N-Channel Shielded Gate Power Trench® MOSFET, 100 V, 2.7 A, 109 mΩ

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDC8601	100 V	5 nC	-55 °C	150 °C	109 mOhm	SOT-23-6 Thin TSOT-23-6	20 V	Surface Mount	4 V	6 V 10 V	SuperSOT™-6	N-Channel	2.7 A	MOSFET (Metal Oxide)	210 pF

N-Channel Shielded Gate Power Trench® MOSFET, 100 V, 2.7 A, 109 mΩ

• Max rDS(on)= 109 mΩat VGS= 10 V, ID= 2.7 A

• Max rDS(on)= 176 mΩat VGS= 6 V, ID= 2.1 A

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability in a widely used surface mount package

• Fast switching speed

• 100% UIL Tested

• RoHS Compliant

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been optimized for rDS(on), switching performance and ruggedness.