NDS351N Series

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.1A, 250mΩ

Catalog

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.1A, 250mΩ

Part	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
ON Semiconductor NDS351N	20 V	Surface Mount	30 V	N-Channel	MOSFET (Metal Oxide)	3.5 nC	1.1 A	SOT-23-3	4.5 V 10 V	140 pF	-55 °C	150 °C	2 V	SC-59 SOT-23-3 TO-236-3	500 mW	160 mOhm

Catalog

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.1A, 250mΩ

Key Features

• 1.1A, 30V. RDS(ON)= 0.25Ω @ VGS= 4.5 V.

• Proprietary package design using copper lead frame for superior thermal and electrical capabilities.

• High density cell design for extremely low RDS(ON).

• Exceptional on-resistance and maximum DC current capability.

• Compact industry standard SOT-23 surface mount package.

Description

These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.