NVMYS2D2N06CL Series

Power MOSFET, 40 V, 2.8 mOhm, 110 A, Single N-Channel

Catalog

Power MOSFET, 40 V, 2.8 mOhm, 110 A, Single N-Channel

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Qualification	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Grade	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor NVMYS2D2N06CLTWG	-55 °C	175 ░C	3.9 W 134 W	AEC-Q101	5	LFPAK4	6	20 V	MOSFET (Metal Oxide)	2 V	N-Channel	Surface Mount	4.5 V 10 V	1.9 mOhm	60 V	Automotive	SOT-1023 4-LFPAK	69 nC
ON Semiconductor NVMYS2D9N04CLTWG	-55 °C	175 ░C	3.7 W 68 W	AEC-Q101	5	LFPAK4	6	20 V	MOSFET (Metal Oxide)	2 V	N-Channel	Surface Mount	4.5 V 10 V	2.8 mOhm	40 V	Automotive	SOT-1023 4-LFPAK	35 nC	27 A 110 A	2100 pF

Catalog

Power MOSFET, 40 V, 2.8 mOhm, 110 A, Single N-Channel

Key Features

• Small Footprint (5x6 mm)

• Low RDS (ON)

• Low QGand Capacitance

• LFPAK4 Package, Industry Standard

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.