FQD1N80 Series

Power MOSFET, N-Channel, QFET®, 800 V, 1.0 A, 20 Ω, DPAK

Catalog

Power MOSFET, N-Channel, QFET®, 800 V, 1.0 A, 20 Ω, DPAK

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Type
ON Semiconductor FQD1N80TM	10 V	1 A	195 pF	800 V	MOSFET (Metal Oxide)	2.5 W 45 W	TO-252AA	30 V	20 Ohm	Surface Mount	-55 °C	150 °C	5 V	7.2 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel

Catalog

Power MOSFET, N-Channel, QFET®, 800 V, 1.0 A, 20 Ω, DPAK

Key Features

• 1A, 800V, RDS(on)= 20Ω(Max.) @VGS= 10 V, ID= 0.5A

• Low gate charge ( Typ. 5.5nC)

• Low Crss( Typ. 2.7pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..