MBR30030 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOTT 30V 150A 2TOWER
| Part | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Technology | Speed | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | -55 °C | 150 °C | Schottky | 200 mA 500 ns | Twin Tower | 30 V | Twin Tower | 1 Pair Common Cathode | 150 A | 580 mV | 3 mA | Chassis Mount |
GeneSiC Semiconductor | -55 °C | 150 °C | Schottky | 200 mA 500 ns | Twin Tower | 30 V | Twin Tower | 1 Pair Common Anode | 150 A | 650 mV | 8 mA | Chassis Mount |
GeneSiC Semiconductor | -55 °C | 150 °C | Schottky | 200 mA 500 ns | Twin Tower | 30 V | Twin Tower | 1 Pair Common Cathode | 150 A | 650 mV | 8 mA | Chassis Mount |
GeneSiC Semiconductor | -55 °C | 150 °C | Schottky | 200 mA 500 ns | Twin Tower | 30 V | Twin Tower | 1 Pair Common Anode | 150 A | 580 mV | 3 mA | Chassis Mount |