SI5403 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET P-CH 30V 6A 1206-8
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | FET Type | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Vgs (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.5 W 6.3 W | 30 mOhm | P-Channel | Surface Mount | 1206-8 ChipFET™ | 1340 pF | 6 A | 3 V | 20 V | MOSFET (Metal Oxide) | 42 nC | 4.5 V 10 V | 30 V | -55 °C | 150 °C |