TLP630 Series

Catalog

PHOTOCOUPLER

Part	Current Transfer Ratio (Min) [Min]	Rise / Fall Time (Typ)	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Forward (Vf) (Typ)	Number of Channels [custom]	Current Transfer Ratio (Max) [Max]	Voltage - Output (Max) [Max]	Mounting Type	Supplier Device Package	Current - Output / Channel [custom]	Package / Case	Current - DC Forward (If) (Max) [Max]	Vce Saturation (Max) [Max]	Output Type	Turn On / Turn Off Time (Typ)	Current Transfer Ratio (Min)
Toshiba Semiconductor and Storage TLP630(GB-FANUC,F)	100 %	2 µs 3 µs	100 °C	-55 C	1.15 V	1	600 %	55 V	Through Hole	6-DIP	50 mA	6-DIP (0.300" 7.62mm)	60 mA	400 mV	Transistor with Base	3 µs
Toshiba Semiconductor and Storage TLP630(TA,F)		2 µs 3 µs	100 °C	-55 C	1.15 V	1	600 %	55 V	Through Hole	6-DIP	50 mA	6-DIP (0.300" 7.62mm)	60 mA	400 mV	Transistor with Base	3 µs	50 %
Toshiba Semiconductor and Storage TLP630(MBS-H,F)		2 µs 3 µs	100 °C	-55 C	1.15 V	1	600 %	55 V	Through Hole	6-DIP	50 mA	6-DIP (0.300" 7.62mm)	60 mA	400 mV	Transistor with Base	3 µs	50 %
Toshiba Semiconductor and Storage TLP630(F)		2 µs 3 µs	100 °C	-55 C	1.15 V	1	600 %	55 V	Through Hole	6-DIP	50 mA	6-DIP (0.300" 7.62mm)	60 mA	400 mV	Transistor with Base	3 µs	50 %