IRFP23 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 23A TO247-3
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Technology | Package / Case | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 3600 pF | -55 °C | 150 °C | N-Channel | MOSFET (Metal Oxide) | TO-247-3 | 370 W | 23 A | 5 V | 235 mOhm | 500 V | 30 V | 150 nC | Through Hole | 10 V | TO-247AC |