XPN6R706NC Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
TRANS MOSFET N-CH SI 60V 40A 8-PIN TSOP ADVANCE(WF) EP T/R AUTOMOTIVE AEC-Q101
| Part | Qualification | Vgs (Max) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Package / Case | FET Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Power Dissipation (Max) | Grade | Supplier Device Package | Supplier Device Package [y] | Supplier Device Package [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | AEC-Q101 | 20 V | MOSFET (Metal Oxide) | 2000 pF | 175 °C | 8-PowerVDFN | N-Channel | 2.5 V | 35 nC | 40 A | 6.7 mOhm | Surface Mount | 60 V | 4.5 V 10 V | 840 mW | 100 W | Automotive | 8-TSON Advance-WF | 3.1 | 3.1 |