SUP40 Series

Catalog

MOSFET P-CH 100V 36A TO220AB

Part	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SUP40P10-43-GE3	TO-220-3	2 W 125 W	43 mOhm	Through Hole	3 V	MOSFET (Metal Oxide)	160 nC	-55 °C	150 °C	4600 pF	100 V	TO-220AB	4.5 V 10 V	20 V	P-Channel	36 A
Vishay General Semiconductor - Diodes Division SUP40N10-30-GE3	TO-220-3	3.1 W 89 W	30 mOhm	Through Hole	4 V	MOSFET (Metal Oxide)	60 nC	-55 °C	150 °C	2400 pF	100 V	TO-220AB	6 V 10 V	20 V	N-Channel	38.5 A
Vishay General Semiconductor - Diodes Division SUP40N10-30-E3	TO-220-3	3.75 W 107 W	30 mOhm	Through Hole	4 V	MOSFET (Metal Oxide)	60 nC	-55 °C	175 ░C	2400 pF	100 V	TO-220AB	6 V 10 V	20 V	N-Channel
Vishay General Semiconductor - Diodes Division SUP40N25-60-E3	TO-220-3	3.75 W 300 W	60 mOhm	Through Hole	4 V	MOSFET (Metal Oxide)	140 nC	-55 °C	175 ░C	5000 pF	250 V	TO-220AB	6 V 10 V	30 V	N-Channel