SI4830 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 8A 8SOIC
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Configuration | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 8 A | Surface Mount | 30 V | 8-SOIC | 2 N-Channel (Half Bridge) | 20 mOhm | -55 °C | 150 °C | 2.9 W | 25 nC | Logic Level Gate | 950 pF | 3 V | 8-SOIC | 3.9 mm | 0.154 in |