MBRF20100CT Series

Schottky Power Rectifier, Switch-mode, 20 A, 100 V

Catalog

Schottky Power Rectifier, Switch-mode, 20 A, 100 V

Part	Technology	Speed	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Diode Configuration
ON Semiconductor MBRF20100CTG	Schottky	200 mA 500 ns	TO-220-3 Full Pack	Through Hole	100 V	175 ░C	-65 C	10 A	150 µA	TO-220FP	850 mV	1 Pair Common Cathode
ON Semiconductor MBRF20100CT	Schottky	200 mA 500 ns	TO-220-3 Full Pack	Through Hole	100 V	175 ░C	-65 C	10 A	150 µA	TO-220FP	850 mV	1 Pair Common Cathode

Catalog

Schottky Power Rectifier, Switch-mode, 20 A, 100 V

Key Features

• Highly Stable Oxide Passivated Junction

• Very Low Forward Voltage Drop

• Matched Dual Die Construction

• High Junction Temperature Capability

• High dv/dt Capability

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guardring for Stress Protection

• Epoxy Meets UL94, VOat 1/8"

• Electrically Isolated. No Isolation Hardware Required.

• UL Recognized File #E69369 (Note 1.)Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.9 grams (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds

• Marking: B20100

Description

The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.