TK22A10 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
12V - 300V MOSFETS, N-CH MOSFET, 100 V, 0.0138 Ω@10V, TO-220SIS, U-MOSⅧ-H
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Technology | FET Type | Vgs (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1800 pF | 22 A | TO-220-3 Full Pack | Through Hole | 100 V | 10 V | MOSFET (Metal Oxide) | N-Channel | 20 V | TO-220SIS | 4 V | 150 °C | 13.8 mOhm | 28 nC |