Catalog
650V 24A TO-263, Low-noise Power MOSFET
Description
AI
R6524ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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650V 24A TO-263, Low-noise Power MOSFET
650V 24A TO-263, Low-noise Power MOSFET
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Package / Case | Power Dissipation (Max) | Technology | Vgs (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 4 V | LPTS | 1650 pF | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 245 W | MOSFET (Metal Oxide) | 20 V | 650 V | 185 mOhm | 10 V | 150 °C | N-Channel | 70 nC | 24 A |