SI4936 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 6.9A 8SOIC
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | FET Feature | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Mounting Type | Configuration | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 6.9 A | 3 V | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 15 nC | 2.8 W | -55 °C | 150 °C | 8-SOIC | Surface Mount | 2 N-Channel (Dual) | 35 mOhm | 530 pF | |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 4.4 A | 3 V | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 20 nC | 1.1 W | -55 °C | 150 °C | 8-SOIC | Surface Mount | 2 N-Channel (Dual) | 36 mOhm | ||
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 3 V | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 9 nC | 2.3 W | -55 °C | 150 °C | 8-SOIC | Surface Mount | 2 N-Channel (Dual) | 40 mOhm | 325 pF | ||
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 4.4 A | 3 V | Logic Level Gate | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 20 nC | 1.1 W | -55 °C | 150 °C | 8-SOIC | Surface Mount | 2 N-Channel (Dual) | 36 mOhm |