EMC5DXV5 Series

Complementary Bipolar Digital Transistor (BRT)

Catalog

Complementary Bipolar Digital Transistor (BRT)

Part	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Resistor - Base (R1)	Transistor Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max [Max]
ON Semiconductor EMC5DXV5T1G	Surface Mount	SOT-553	50 V	10 kOhms 47000 Ohms	500 nA	100 mA	SOT-553	4.7 kOhms 47 kOhms	1 NPN 1 PNP	250 mV	20 hFE	80 hFE	500 mW
ON Semiconductor EMC5DXV5T1	Surface Mount	SOT-553	50 V	10 kOhms 47000 Ohms	500 nA	100 mA	SOT-553	4.7 kOhms 47 kOhms	1 NPN 1 PNP	250 mV	20 hFE	80 hFE	500 mW

Catalog

Complementary Bipolar Digital Transistor (BRT)

Key Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch Tape and Reel

• These are Pb-Free Devices

Description

The Dual Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base¿emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. This eliminates these individual components by integrating them into a single device. In the EMC2DXV5T1 series, two complementary devices are housed in the SOT¿553 package which is ideal for low power surface mount applications where board space is at a premium.