NTB190N65S3HF Series

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 20 A, 190 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 20 A, 190 mΩ, D2PAK

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTB190N65S3HF	34 nC	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	5 V	162 W	10 V	N-Channel	MOSFET (Metal Oxide)	30 V	190 mOhm	1610 pF	650 V	Surface Mount	20 A

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 20 A, 190 mΩ, D2PAK

Key Features

• 700 V @ TJ= 150 °C

• Ultra Low Gate Charge (Typ. Qg= 35 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 464 pF)

• Excellent body diode performance (low Qrr, robust body diode)

• Optimized Capacitance

• RoHS Compliant

• 100% Avalanche Tested

• Typ. RDS(on)= 161 mΩ

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.