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P-Channel Enhancement Mode Vertical DMOS FET
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P-Channel Enhancement Mode Vertical DMOS FET
P-Channel Enhancement Mode Vertical DMOS FET
| Part | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Package / Case | Technology | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | FET Type | Vgs (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 200 mA | 10 V | SOT-223-3 | TO-261-4 TO-261AA | MOSFET (Metal Oxide) | 200 V | Surface Mount | 100 pF | 3.5 V | 2 W | -55 °C | 150 °C | 25 Ohm | P-Channel | ||
 Diodes Inc | 10 V | TO-92 | TO-226-3 TO-92-3 | MOSFET (Metal Oxide) | 200 V | Through Hole | 100 pF | 3.5 V | -55 °C | 150 °C | 25 Ohm | P-Channel | 20 V | 700 mW |