SIR876 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 100V 40A PPAK SO-8
| Part | Package / Case | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Technology | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 | 2.8 V | 1640 pF | 48 nC | -55 °C | 150 °C | N-Channel | 20 V | Surface Mount | 10.8 mOhm | PowerPAK® SO-8 | 4.5 V 10 V | MOSFET (Metal Oxide) | 5 W 62.5 W | 100 V | ||
Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 | 2.8 V | -55 °C | 150 °C | N-Channel | 20 V | Surface Mount | 10.8 mOhm | PowerPAK® SO-8 | 4.5 V 10 V | MOSFET (Metal Oxide) | 5 W 62.5 W | 100 V | 1630 pF | 10 V 49 nC |