NTHL082N65S3F Series

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, TO-247

Part	Technology	Mounting Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTHL082N65S3F	MOSFET (Metal Oxide)	Through Hole	313 W	650 V	3410 pF	81 nC	-55 °C	150 °C	30 V	5 V	N-Channel	TO-247-3	82 mOhm	TO-247-3	10 V

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, TO-247

Key Features

• 700 V @ TJ= 150 °C

• Ultra Low Gate Charge (Typ. Qg= 81 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 722 pF)

• Excellent body diode performance (low Qrr, robust body diode)

• Optimized Capacitance

• Typ. RDS(on)= 70 mΩ

• 100% Avalanche Tested

• RoHS Compliant

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.