SSM3J338 Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -12 V, -6.0 A, 0.0202 Ω@4.5V, SOT-23F

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Technology
Toshiba Semiconductor and Storage SSM3J338R,LF	1400 pF	150 °C	SOT-23F	19.5 nC	10 V	Surface Mount	17.6 mOhm	1.8 V	8 V	6 A	1 W	P-Channel	12 V	SOT-23-3 Flat Leads	1 V	MOSFET (Metal Oxide)