IRFP254 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 250V 23A TO247-3
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Technology | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 4 V | TO-247AC | MOSFET (Metal Oxide) | 140 mOhm | 140 nC | TO-247-3 | 190 W | 250 V | N-Channel | Through Hole | 10 V | 23 A | -55 °C | 150 °C | 20 V | ||
Vishay General Semiconductor - Diodes Division | 4 V | TO-247AC | MOSFET (Metal Oxide) | 100 nC | TO-247-3 | 220 W | 250 V | N-Channel | Through Hole | 10 V | 23 A | -55 °C | 175 ░C | 20 V | 125 mOhm | 2040 pF | |
Vishay General Semiconductor - Diodes Division | 4 V | TO-247AC | MOSFET (Metal Oxide) | 140 mOhm | 140 nC | TO-247-3 | 190 W | 250 V | N-Channel | Through Hole | 10 V | 23 A | -55 °C | 150 °C | 20 V |