SIA810 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 20V 4.5A PPAK SC70-6
| Part | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Vgs(th) (Max) @ Id | Vgs (Max) | Mounting Type | FET Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 4.5 A | -55 °C | 150 °C | 20 V | 400 pF | Schottky Diode (Isolated) | 1 V | 8 V | Surface Mount | N-Channel | 1.9 W 6.5 W | 1.8 V 4.5 V | PowerPAK® SC-70-6 Dual | 53 mOhm | MOSFET (Metal Oxide) | 11.5 nC | PowerPAK® SC-70-6 Dual |