FQD6N25 Series

Power MOSFET, N-Channel, QFET®, 250 V, 4.4 A, 1 Ω, DPAK

Catalog

Power MOSFET, N-Channel, QFET®, 250 V, 4.4 A, 1 Ω, DPAK

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case
ON Semiconductor FQD6N25TM	TO-252AA	250 V	MOSFET (Metal Oxide)	8.5 nC	Surface Mount	1 Ohm	N-Channel	30 V	10 V	4.4 A	300 pF	-55 °C	150 °C	2.5 W 45 W	5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3

Catalog

Power MOSFET, N-Channel, QFET®, 250 V, 4.4 A, 1 Ω, DPAK

Key Features

• 4.4A, 250V, RDS(on)= 1.0Ω(Max.) @VGS= 10 V, ID= 2.2A

• Low gate charge ( Typ. 6.6 nC)

• Low Crss( Typ. 7.5pF)

• 100% avalanche tested

• RoHS compliant

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.